Browsing Artigos by Subject "A1. EL2"

Browsing Artigos by Subject "A1. EL2"

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  • Aziz, M.; Mesli, A.; Felix, J.F.; Jameel, D.; Al Saqri, N.; Taylor, D.; Henini, M. (Journal of Crystal Growth, 2015-08-15)
    Post-growth annealing treatments in the range 400–600 °C are performed on GaSb/GaAs Interfacial Misfit grown samples. Current density–voltage (J–V), Capacitance–voltage (C–V), capacitance–frequency (C–F) and Deep Level ...

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