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https://locus.ufv.br//handle/123456789/21380
Tipo: | Artigo |
Título: | Overgrowth of wrinkled InGaAs membranes using molecular beam epitaxy |
Autor(es): | Silva, S. Filipe Covre da Lanzoni, E.M. Malachias, A. Deneke, Ch. |
Abstract: | Partly released InGaAs layers forming a wrinkled network are used as templates for InAs growth. A systematic growth study was carried out, where InAs amounts from 0 ML to 3 ML were deposited on the patterned samples. The material migration during growth is evaluated by distinct microscopy techniques. We find a systematic accumulation of the deposited material on the released, wrinkled areas of the sample, whereas no material accumulation or formation of three-dimensional nanostructures is observed on the unreleased areas of the sample. |
Palavras-chave: | A1. Patterned substrate A3. Molecular beam epitaxy B2. Freestanding membranes InAs growth |
Editor: | Journal of Crystal Growth |
Tipo de Acesso: | Elsevier B.V. |
URI: | https://doi.org/10.1016/j.jcrysgro.2015.02.008 http://www.locus.ufv.br/handle/123456789/21380 |
Data do documento: | 1-Set-2015 |
Aparece nas coleções: | Artigos |
Arquivos associados a este item:
Arquivo | Descrição | Tamanho | Formato | |
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artigo.pdf Until 2100-12-31 | texto completo | 1,41 MB | Adobe PDF | Visualizar/Abrir ACESSO RESTRITO |
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