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Browsing Artigos by Subject "A3. Molecular beam epitaxy"

Browsing Artigos by Subject "A3. Molecular beam epitaxy"

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  • Silva, S. Filipe Covre da; Lanzoni, E.M.; Malachias, A.; Deneke, Ch. (Journal of Crystal Growth, 2015-09-01)
    Partly released InGaAs layers forming a wrinkled network are used as templates for InAs growth. A systematic growth study was carried out, where InAs amounts from 0 ML to 3 ML were deposited on the patterned samples. The ...

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