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dc.contributor.authorLeal, F.F.
dc.contributor.authorFerreira, S.O.
dc.contributor.authorMenezes-Sobrinho, I.L.
dc.contributor.authorFaria, T.E.
dc.date.accessioned2018-04-20T14:17:05Z
dc.date.available2018-04-20T14:17:05Z
dc.date.issued2004-12-10
dc.identifier.issn17426596
dc.identifier.urihttps://doi.org/10.1088/0953-8984/17/1/003
dc.identifier.urihttp://www.locus.ufv.br/handle/123456789/18942
dc.description.abstractCadmium telluride films were grown on glass substrates using the hot wall epitaxy (HWE) technique. The samples were polycrystalline with a preferential (111) orientation. Scanning electron micrographs reveal a grain size between 0.1 and 0.5 μm. The surface morphology of the samples was studied by measuring the roughness profile using a stylus profiler. The roughness as a function of growth time and scale size were investigated to determine the growth and roughness exponents, β and α, respectively. From the results we can conclude that the growth surface has a self-affine character with a roughness exponent α equal to 0.69 ± 0.03 and almost independent of growth time. The growth exponent β was equal to 0.38 ± 0.06. These values agree with that determined previously for CdTe(111) films grown on GaAs(100).en
dc.formatpdfpt-BR
dc.language.isoengpt-BR
dc.publisherJournal of Physicspt-BR
dc.relation.ispartofseriesv. 17, n. 1, p. 27–32, jan. 2005pt-BR
dc.rightsIOP Publishing Ltdpt-BR
dc.subjectRoughness of CdTept-BR
dc.subjectHot wall epitaxypt-BR
dc.titleRoughness of CdTe thin films grown on glass by hot wall epitaxyen
dc.typeArtigopt-BR
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