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Campo DC | Valor | Idioma |
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dc.contributor.author | Leal, F.F. | |
dc.contributor.author | Ferreira, S.O. | |
dc.contributor.author | Menezes-Sobrinho, I.L. | |
dc.contributor.author | Faria, T.E. | |
dc.date.accessioned | 2018-04-20T14:17:05Z | |
dc.date.available | 2018-04-20T14:17:05Z | |
dc.date.issued | 2004-12-10 | |
dc.identifier.issn | 17426596 | |
dc.identifier.uri | https://doi.org/10.1088/0953-8984/17/1/003 | |
dc.identifier.uri | http://www.locus.ufv.br/handle/123456789/18942 | |
dc.description.abstract | Cadmium telluride films were grown on glass substrates using the hot wall epitaxy (HWE) technique. The samples were polycrystalline with a preferential (111) orientation. Scanning electron micrographs reveal a grain size between 0.1 and 0.5 μm. The surface morphology of the samples was studied by measuring the roughness profile using a stylus profiler. The roughness as a function of growth time and scale size were investigated to determine the growth and roughness exponents, β and α, respectively. From the results we can conclude that the growth surface has a self-affine character with a roughness exponent α equal to 0.69 ± 0.03 and almost independent of growth time. The growth exponent β was equal to 0.38 ± 0.06. These values agree with that determined previously for CdTe(111) films grown on GaAs(100). | en |
dc.format | pt-BR | |
dc.language.iso | eng | pt-BR |
dc.publisher | Journal of Physics | pt-BR |
dc.relation.ispartofseries | v. 17, n. 1, p. 27–32, jan. 2005 | pt-BR |
dc.rights | IOP Publishing Ltd | pt-BR |
dc.subject | Roughness of CdTe | pt-BR |
dc.subject | Hot wall epitaxy | pt-BR |
dc.title | Roughness of CdTe thin films grown on glass by hot wall epitaxy | en |
dc.type | Artigo | pt-BR |
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